III-V Semiconductors

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Engineering / III-V Semiconductors / Applied Physics / Semiconductor Devices / Physical sciences

Low-energy cathodoluminescence spectroscopy of semiconductor interfaces

Engineering / Materials Engineering / Aerospace Engineering / Arsenic / III-V Semiconductors / Crystal structure / Atmospheric sciences / Physical sciences / Low Energy Buildngs / Vacuum / Optical Properties / Spatial Distribution / Electrical Properties / Gallium Arsenide / Mass Spectroscopy / Physical Properties / Energy Levels / Superlattices / Crystal structure / Atmospheric sciences / Physical sciences / Low Energy Buildngs / Vacuum / Optical Properties / Spatial Distribution / Electrical Properties / Gallium Arsenide / Mass Spectroscopy / Physical Properties / Energy Levels / Superlattices

Low energy cathodoluminescence spectroscopy of SiO2 nanoparticles

Engineering / Materials Engineering / Aerospace Engineering / Arsenic / III-V Semiconductors / Crystal structure / Atmospheric sciences / Physical sciences / Low Energy Buildngs / Vacuum / Optical Properties / Spatial Distribution / Electrical Properties / Gallium Arsenide / Mass Spectroscopy / Physical Properties / Energy Levels / Superlattices / Crystal structure / Atmospheric sciences / Physical sciences / Low Energy Buildngs / Vacuum / Optical Properties / Spatial Distribution / Electrical Properties / Gallium Arsenide / Mass Spectroscopy / Physical Properties / Energy Levels / Superlattices

Implications of record peak current density In<inf>0.53</inf>Ga<inf>0.47</inf>As Esaki tunnel diode on Tunnel FET logic applications

III-V Semiconductors / Device / Current Density / Device Simulation / Double Gate / Transient Response / Current-Voltage Characteristic / Transient Response / Current-Voltage Characteristic

High internal and external quantum efficiency InGaN/GaN solar cells

Engineering / III-V Semiconductors / Solar Cell / Applied Physics / Physical sciences / Band Gap / Current Density / Wave propagation / Spectrum / Fill Factor / Open Circuit Voltage / External Quantum Efficiency / Band Gap / Current Density / Wave propagation / Spectrum / Fill Factor / Open Circuit Voltage / External Quantum Efficiency

Lambda shifted photonic crystal cavity laser

Engineering / III-V Semiconductors / Organic Semiconductor Laser / Physical sciences / Photonic Crystal / Room Temperature / Quantum Well / Gallium Arsenide / Laser Diode / Finite Difference Time Domain / Room Temperature / Quantum Well / Gallium Arsenide / Laser Diode / Finite Difference Time Domain

Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires

Engineering / III-V Semiconductors / Applied Physics / Nanowires / Mathematical Sciences / Applied / Physical sciences / Band Gap / Time Resolved / Temperature Dependence / Room Temperature / Optical Pumping / Applied / Physical sciences / Band Gap / Time Resolved / Temperature Dependence / Room Temperature / Optical Pumping

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Engineering / III-V Semiconductors / Applied Physics / Semiconductor Devices / Physical sciences

High internal and external quantum efficiency InGaN/GaN solar cells

Engineering / III-V Semiconductors / Solar Cell / Applied Physics / Physical sciences / Band Gap / Current Density / Wave propagation / Spectrum / Fill Factor / Open Circuit Voltage / External Quantum Efficiency / Band Gap / Current Density / Wave propagation / Spectrum / Fill Factor / Open Circuit Voltage / External Quantum Efficiency

High internal and external quantum efficiency InGaN/GaN solar cells

Engineering / III-V Semiconductors / Solar Cell / Applied Physics / Physical sciences / Band Gap / Current Density / Wave propagation / Spectrum / Fill Factor / Open Circuit Voltage / External Quantum Efficiency / Band Gap / Current Density / Wave propagation / Spectrum / Fill Factor / Open Circuit Voltage / External Quantum Efficiency

A study of disorder effects in random (Al[sub x]Ga[sub 1−x]As)[sub n](Al[sub y]Ga[sub 1−y]As)[sub m] superlattices embedded in a wide parabolic potential

Engineering / III-V Semiconductors / Magnetic field / Solid State electronic devices / Physical sciences / Quantum Well / Gallium Arsenide / Superlattices / Quantum Well / Gallium Arsenide / Superlattices

InAs-GaAs self-assembled quantum dot lasers: Physical processes and device characteristics

Materials Engineering / III-V Semiconductors / Nanotechnology / Organic Semiconductor Laser / Oscillations / Excited states / Quantum Dot / Electro-optic modulators / Excited states / Quantum Dot / Electro-optic modulators

Coherent quantum cascade laser micro-stripe arrays

III-V Semiconductors / Organic Semiconductor Laser / Optical Fiber Fabrication / Iron / Phase Locking / Room Temperature / AIP / Room Temperature / AIP

Actas XV Jornadas sobre la Historia de Tauste

Cartography / Medieval History / III-V Semiconductors / Islamic History / Cartografia / Rusia / Islmic Studies / SEGUNDA GUERRA MUNDIAL / GUERRA CIVIL ESPAÑOLA / Historia Medieval / III Reich / División Azul / Battle of Stalingrad / Rusia / Islmic Studies / SEGUNDA GUERRA MUNDIAL / GUERRA CIVIL ESPAÑOLA / Historia Medieval / III Reich / División Azul / Battle of Stalingrad

Spin-polarized reflection in a two-dimensional electron system

Engineering / III-V Semiconductors / Applied Physics / Physical sciences / Spin Relaxation / Ballistic Transport / Contact Resistance / Spin Orbit Coupling / Spin Polarization / Ballistic Transport / Contact Resistance / Spin Orbit Coupling / Spin Polarization

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